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UPD720210K8-BAF-A
Category: Computing & Storage › Memory & Storage › Storage Devices › USB Flash DriveRenesas |
Renesas | N/A
Packaging: TRY
Supplier Type: Authorized Distributor | 165
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ATSHA204A-STUCZ-T
Category: EEPROM, Memory & Storage › Memory ICsMicrochip |
Microchip | The Microchip ATSHA204A is a full turnkey security device. It includes a 4.5Kb EEPROM divided into 16 slots. This array can be used for storage of keys, miscellaneous read/write, read-only, password or secret data, and consumption tracking. Access to the various sections of memory can be restricted in a variety of ways and then the configuration locked to prevent changes.Access to the chip is through a standard I²C interface at speeds up to 1Mb/sec. The chip also supports a single-wire interface that can reduce the number of GPIOs required on the system processor and/or reduce the number of pins on connectors. It is compatible with most UART or serial I/O controllers. System integration is eased with a wide supply voltage range and an ultra-low sleep current of less than 100nA.
Packaging: TAP
Supplier Type: Authorized Distributor | 4,481
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| 1 | 0.873 | | 25 | 0.7837 | | 50 | 0.7713 | | 100 | 0.7589 |
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FM24C04B-GTR
Category: FRAM, Memory & Storage › Memory ICsInfineon |
Infineon | The FM24C04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24C04B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24C04B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.
Packaging: TR
Supplier Type: Authorized Distributor | 5,000
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| 695 | 1.5178 | | 700 | 1.4731 | | 1,400 | 1.4285 | | 3,500 | 1.3838 | | 7,000 | 1.3392 | | 35,000 | 1.2946 | | 70,000 | 1.2499 |
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