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NCP81155MNTXG
Category: Gate Driversonsemi |
onsemi | N/A
Packaging: TR
Supplier Type: Partner Stock | 3,000
in stock | | | Qty | Price |
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| 3,000 | 0.2511 | | 6,000 | 0.2444 | | 12,000 | 0.2377 | | 18,000 | 0.231 | | 24,000 | 0.2243 |
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VN5050JTR-E
Category: Current Limit Switches, Electromechanical, Gate Drivers, Motor DriversSTMicroelectronics |
STMicroelectronics | The VN5050J-E is a monolithic device made using STMicroelectronics VIPower technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). The device detects open load condition both in on and off state, when STAT_DIS is left open or driven low. Output shorted to VCC is detected in the off state.When STAT_DIS is driven high, the STATUS pin is in a high impedance condition.Output current limitation protects the device in overload condition. In case of long duration overload, the device limits the dissipated power to safe level up to thermal shut-down intervention.Thermal shutdown with automatic restart allows the device to recover normal operation as soon as fault condition disappears.
Packaging: TR
Supplier Type: Partner Stock | 2,500
in stock | | | Qty | Price |
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| 2,500 | 1.5718 | | 5,000 | 1.5394 | | 10,000 | 1.507 |
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IR2104STRPBF
Category: Gate and Power Drivers, Gate Drivers, Mosfet Igbt DriversInfineon |
Infineon | The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.
Packaging: TAP
Supplier Type: Partner Stock | 1,983
in stock | | | Qty | Price |
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| 1 | 2.6164 | | 10 | 2.356 | | 25 | 2.232 | | 50 | 2.0584 | | 100 | 1.8972 |
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HIP4082IBZT
Category: Gate Drivers, No CategoryRenesas Electronics |
Renesas Electronics | The HIP4082 is a medium frequency, medium voltage H-Bridge N-Channel MOSFET driver IC, available in 16 lead plastic SOIC (N) and DIP packages. Specifically targeted for PWM motor control and UPS applications, bridge based designs are made simple and flexible with the HIP4082 H-bridge driver. With operation up to 80V, the device is best suited to applications of moderate power levels. It has a flexible input protocol for= driving every possible switch combination except those which would cause a shoot-through condition. The HIP4082’s reduced drive current allows smaller packaging and it has a much wider range of programmable dead times (0.1 to 4.5 µs) making it ideal for switching frequencies up to 200kHz. The HIP4082 does not contain an internal charge pump, but does incorporate non-latching level-shift translation control of the upper drive circuits.
Packaging: TAP
Supplier Type: Partner Stock | 1,515
in stock | | | Qty | Price |
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| 1 | 5.5304 | | 10 | 4.9724 | | 25 | 4.7616 | | 50 | 4.5384 | | 100 | 4.3276 |
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TC4427AEOA
Category: Gate and Power Drivers, Gate Drivers, Mosfet Igbt DriversMicrochip |
Microchip | The TC4427A is improved versions of the earlier TC4427 family of MOSFET drivers. In addition to matched rise and fall times, the TC4426A/TC4427A/TC4428A devices have matched leading and falling edge propagation delay times. These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 4 kV. The TC4427 MOSFET drivers can easily charge/discharge 1000 pF gate capacitances in under 30 ns. These devices provide low enough impedances in both the on and off states to ensure the MOSFET’s intended state will not be affected, even by large transients.
Packaging: RAL
Supplier Type: Partner Stock | 18
in stock | | |
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