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MT47H128M16RT-25EIT:C
Category: DRAMsMicron |
Micron | N/A
Packaging: TRY
Supplier Type: Authorized Distributor | 1,440
available | | | Qty | Price |
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| 1 | 14.5458 | | 10 | 14.1446 | | 30 | 13.7433 | | 50 | 13.4423 | | 100 | 13.0411 | | 250 | 12.6398 | | 500 | 12.2386 |
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MT47H128M16RT-25E AIT:C
Category: DRAMsMicron |
Micron | N/A
Packaging: TRY
Supplier Type: Authorized Distributor | 1,260
available | | | Qty | Price |
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| 1,260 | 15.6711 | | 1,300 | 15.4504 | | 2,600 | 15.009 | | 6,300 | 14.6779 | | 13,000 | 14.1261 | | 63,000 | 13.9054 | | 130,000 | 13.6846 |
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AS4C256M16D3C-12BCN
Category: DRAMsAlliance Memory |
Alliance Memory | DRAM, DDR3, 4 Gbit, 256M x 16bit, 800 MHz, FBGA, 96 Pins AS4C256M16D3C-12BCN is a 256M x 16bit DDR3 synchronous DRAM (SDRAM). The 4Gb double-data-rate-3 DRAM is a double data rate architecture to achieve high-speed operation. It is internally configured as an eight-bank DRAM. The 4Gb chip is organized as 32Mbit x 16I/Os x 8 bank devices. This synchronous device achieves high-speed double-data-rate transfer rates of up to 2133Mb/sec/pin for general applications. The chip is designed to comply with all DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source-synchronous fashion.
Packaging: TRY
Supplier Type: Authorized Distributor | 942
available | | | Qty | Price |
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| 1 | 11.9196 | | 10 | 11.008564 | | 30 | 10.131576 | | 50 | 10.03275 | | 100 | 9.9813 |
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