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FQA24N60
Category: MOSFETs, Single MOSFETsonsemi |
onsemi | This N-Channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Packaging: RAL
Supplier Type: Authorized Distributor | 350
available | | | Qty | Price |
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| 1 | 4.8662 | | 10 | 4.7841 | | 30 | 4.702 | | 50 | 4.6198 | | 100 | 4.5377 |
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IRF9630PBF-BE3
Category: MOSFETs, Single MOSFETsVishay |
Vishay | N/A
Packaging: BLK
Supplier Type: Authorized Distributor | 703
available | | | Qty | Price |
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| 1 | 1.9096 | | 10 | 1.7484 | | 25 | 1.6492 | | 50 | 1.55 | | 100 | 1.4632 |
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IRLR024NTRPBF
Category: MOSFETs, Single MOSFETsInfineon |
Infineon | Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Packaging: TR
Supplier Type: Authorized Distributor | 6,000
available | | | Qty | Price |
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| 2,000 | 0.4084 | | 4,000 | 0.396 | | 8,000 | 0.3836 | | 12,000 | 0.3713 | | 16,000 | 0.3589 | | 20,000 | 0.3465 | | 200,000 | 0.3341 |
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