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MT25QL128ABA1ESE-0SIT
Category: Flash Memory, Memory & Storage › Memory ICsMicron |
Micron | The MT25Q is a high-performance multiple input/output serial Flash memory device manufactured on 45nm NOR technology. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Innovative, high-performance, dual and quad input/ output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.
Packaging: BLK
Supplier Type: Authorized Distributor | 1,473
available | | | Qty | Price |
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| 1 | 4.8112 | | 10 | 4.03 | | 25 | 3.9928 | | 50 | 3.9432 | | 100 | 3.906 |
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M24C16-WMN6TP
Category: EEPROM, Memory & Storage › Memory ICsSTMicroelectronics |
STMicroelectronics | EEPROM, I2C, 16 Kbit, 2K x 8bit, 400 kHz, 8 Pins, NSOIC The devices are Electrically Erasable PROgrammable Memories (EEPROMs) organized as as 2048x8 bits, 1024x8 bits, 512x8 bits, 256x8 bits (M24C16, M24C08, M24C04 and M24C02).The devices are compatible with all I²C modes up to 400 kHz and can operate with a s
Packaging: TR
Supplier Type: Authorized Distributor | 75,000
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FM24C04B-GTR
Category: FRAM, Memory & Storage › Memory ICsInfineon |
Infineon | The FM24C04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24C04B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24C04B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.
Packaging: TR
Supplier Type: Authorized Distributor | 5,000
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| 695 | 1.5178 | | 700 | 1.4731 | | 1,400 | 1.4285 | | 3,500 | 1.3838 | | 7,000 | 1.3392 | | 35,000 | 1.2946 | | 70,000 | 1.2499 |
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