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AS4C256M16D3C-12BCN
Category: DRAM, Memory & Storage › Memory ICsAlliance Memory |
Alliance Memory | DRAM, DDR3, 4 Gbit, 256M x 16bit, 800 MHz, FBGA, 96 Pins AS4C256M16D3C-12BCN is a 256M x 16bit DDR3 synchronous DRAM (SDRAM). The 4Gb double-data-rate-3 DRAM is a double data rate architecture to achieve high-speed operation. It is internally configured as an eight-bank DRAM. The 4Gb chip is organized as 32Mbit x 16I/Os x 8 bank devices. This synchronous device achieves high-speed double-data-rate transfer rates of up to 2133Mb/sec/pin for general applications. The chip is designed to comply with all DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source-synchronous fashion.
Packaging: TRY
Supplier Type: Authorized Distributor | 942
available | | | Qty | Price |
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| 1 | 16.68744 | | 10 | 15.4119896 | | 30 | 14.1842064 | | 50 | 14.04585 | | 100 | 13.97382 |
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AS4C1G32MD4V-046BIN
Category: DRAM, Memory & Storage › Memory ICsAlliance Memory |
Alliance Memory | DRAM LPDDR4X, 32Gb, 1G X 32, 0.6v, 200ball TFBGA, 2133MHZ,industrial Temp
Packaging: Tray
Supplier Type: Authorized Distributor | 257
available | | | Qty | Price |
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| 1 | 484.7668 | | 10 | 440.5492 | | 25 | 427.8092 |
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ASFC32G31T3-51BIN
Category: Embedded Storage, Memory & Storage › Memory ICsAlliance Memory |
Alliance Memory | emmc 32GB 256Gbx1 TLC NAND 153ball FBGA
Packaging: TRAY
Supplier Type: Authorized Distributor | 7,292
available | | | Qty | Price |
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| 1 | 586.53 | | 2 | 572.3984 | | 3 | 558.6 |
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AS4C16M16SA-6BAN
Category: DRAMs, MiscellaneousAlliance Memory |
Alliance Memory | DRAM, SDRAM, 256 Mbit, 16M x 16bit, 166 MHz, 54-Pin, FBGA AS4C16M16SA-6BAN 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a read or write command. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either auto or self refresh are easy to use. By having a programmable mode register, the system can choose most suitable modes to maximize its performance. It is well suited for applications requiring high memory bandwidth and particularly well suited to high-performance PC applications.
Packaging: TRY
Supplier Type: Authorized Distributor | 2,918
available | | | Qty | Price |
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| 1 | Contact ASC for Pricing |
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M29F800FT55N3E2
Category: Miscellaneous, NOR FlashAlliance Memory |
Alliance Memory | NOR Flash NOR Flash(Micron) , PARALLEL, 8Mb, TSOP 48PIN, 55ns, -40 +125 C, TOP, Tray
Packaging: Tray
Supplier Type: Authorized Distributor | 526
available | | | Qty | Price |
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| 1 | 13.7984 | | 10 | 12.8576 | | 25 | 12.4656 | | 50 | 12.1716 | | 96 | 11.858 | | 288 | 11.4856 | | 576 | 11.1328 | | 1,056 | 10.8584 |
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