BTS5215LAUMA1
Category: Current Limit Switches , Electromechanical , Power Load Distribution Switches Infineon
Infineon High side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions. Packaging: TRSupplier Type: Authorized Distributor135,000
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IR2110STRPBF
Category: Gate and Power Drivers , Mosfet Igbt Drivers Infineon
Infineon IR2110S Series Dual 20V Surface Mount High and Low Side Driver - SOIC-16 Packaging: REELSupplier Type: Authorized Distributor94,000
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IRFR3410TRPBF
Category: MOSFETs Infineon
Infineon Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - TO-252-3 Packaging: REELSupplier Type: Authorized Distributor92,000 Qty Price 2,000 0.4092 4,000 0.4092 6,000 0.4092 8,000 0.4092 10,000 0.4092
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IRF3205PBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Packaging: BLKSupplier Type: Authorized Distributor67,071 Qty Price 1 1.9592 10 1.6616 100 1.2896 500 1.09 1,000 0.8878
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IRFS7530TRL7PP
Category: MOSFETs Infineon
Infineon Single N-Channel 60 V 1.4 mOhm 236 nC HEXFET® Power Mosfet - D2PAK-7 Packaging: REELSupplier Type: Authorized Distributor44,800 Qty Price 800 1.8476 1,600 1.8476 2,400 1.8476 3,200 1.8476
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IRF640NPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Packaging: RALSupplier Type: Authorized Distributor32,430 Qty Price 1 0.6191 10 0.6009 30 0.5827 50 0.5645 100 0.5463 250 0.5281 500 0.5099
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CY8C20436A-24LQXI
Category: MCUs Infineon Technologies
Infineon Technologies MCU 8-bit M8C CISC 8KB Flash 1.8V/2.5V/3.3V/5V 32-Pin QFN EP Tray Packaging: N/ASupplier Type: Authorized Distributor29,400
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IRF540NSTRLPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530L) is available for lowprofile applications. Packaging: TRSupplier Type: Authorized Distributor23,200 Qty Price 800 0.7907 1,600 0.7675 3,200 0.7442 4,800 0.7209 6,400 0.6977 8,000 0.6744 80,000 0.6512
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IRFR5410TRPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Packaging: TRSupplier Type: Authorized Distributor20,000 Qty Price 2,000 0.7202 4,000 0.6984 8,000 0.6765 12,000 0.6547 16,000 0.6329 20,000 0.6111 200,000 0.5892
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IPP083N10N5AKSA1
Category: MOSFETs , Single MOSFETs Infineon
Infineon OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on). Packaging: RALSupplier Type: Authorized Distributor19,000
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BTS4140NXT/SAMPLE
Category: Power Load Distribution Switches Infineon
Infineon High side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions. Packaging: TRSupplier Type: Authorized Distributor16,000
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IRF4905PBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Packaging: RALSupplier Type: Authorized Distributor13,957 Qty Price 1 1.3264 10 1.2873 30 1.2483 50 1.2093 100 1.1703 250 1.1313 500 1.0923
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IR3584MTRPBF
Category: DC / DC Controllers , DC to DC Controllers Infineon
Infineon The IR3584 is a dual-loop digital multi-phase buck controller designed for CPU voltage regulation, and is fully compliant with Intel VR12 and compliant with VR12.5 Rev 1.3 PWM specifications. The IR3584 includes IR’s Efficiency Shaping Technology to deliver exceptional efficiency at minimum cost across the entire load range. IR’s Dynamic Phase Control adds/drops phases based upon load current. The IR3584 can be configured to enter 1 or 2-phase operation and active diode emulation mode automatically or by command. IR’s unique Adaptive Transient Algorithm (ATA), based on proprietary non-linear digital PWM algorithms, minimizes output bulk capacitors. IR3584 has 127 possible address values for both the PMBus and I2C bus interfaces. The device configuration can be easily defined using the IR Digital Power Design Center (DPDC) GUI, and is stored in the on-chip Non-Volatile Memory (NVM). This reduces external components and minimizes the package size. The IR3584 provides extensive OVP, UVP, OCP, OTP & CAT FLT fault protection, and includes thermistor based temperature sensing or per phase temperature reporting when using the IR powIRstage. The controller is designed to work with either RDS(on) current sense PowIRstages or with DCR current sense. The IR3584 also includes numerous VR design simplifying and differentiating features, like register diagnostics, which enable fast time-to-market. Packaging: TRSupplier Type: Authorized Distributor9,000 Qty Price 3,000 3.9283 6,000 3.8056 12,000 3.6828 18,000 3.56 24,000 3.4373 30,000 3.3145 300,000 3.1918
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BAS16E6327HTSA1
Category: Rectifiers , Small Signal Switching Diodes Infineon
Infineon High Speed Switching Diode. Packaging: TRSupplier Type: Authorized Distributor9,000 Qty Price 45,000 0.0419 51,000 0.0406 96,000 0.0392 225,000 0.0379 450,000 0.0366 2,250,000 0.0353 4,500,000 0.034
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XMC1302T038X0064ABXUMA1
Category: ARM Microcontrollers , MCUs Infineon
Infineon 32-bit Microcontrollers with ARM® Cortex®-M0 with focus on low-cost embedded control applications. Packaging: TAPSupplier Type: Authorized Distributor8,444 Qty Price 1 2.7528 10 2.4552 25 2.3932 50 2.3312 100 2.2692
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IRF7342TRPBF-EL
Category: MOSFET Arrays Infineon
Infineon Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Packaging: BKNSupplier Type: Authorized Distributor7,500
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CY7C68013A-56LTXC
Category: Usb , USB Interface ICs Infineon
Infineon CY7C68 Series 16 kb RAM EZ-USB FX2LP™ USB Microcontroller - QFN-56 Packaging: TRAYSupplier Type: Authorized Distributor6,948 Qty Price 1 7.3408 5 7.3408 20 7.3408 40 7.3408 100 7.3408
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IRLR024NTRPBF
Category: MOSFETs , Single MOSFETs Infineon
Infineon Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Packaging: TRSupplier Type: Authorized Distributor6,000 Qty Price 2,000 0.4084 4,000 0.396 8,000 0.3836 12,000 0.3713 16,000 0.3589 20,000 0.3465 200,000 0.3341
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CYW43012TC0EKUBGT
Category: Combo Wireless Modules Infineon Technologies
Infineon Technologies Single-Chip, Ultra-Low Power, IEEE 802.11N, 802.11AC-Friendly (TM) MAC/Baseband/Radio with Bluetooth 5.0 Packaging: N/ASupplier Type: Authorized Distributor5,000 Qty Price 0 6.5347 5,000 4.7604
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FM24C04B-GTR
Category: Ferroelectric RAM (FRAM) , FRAM , Fram Mram Infineon
Infineon The FM24C04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24C04B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24C04B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. Packaging: TRSupplier Type: Authorized Distributor5,000 Qty Price 695 1.5178 700 1.4731 1,400 1.4285 3,500 1.3838 7,000 1.3392 35,000 1.2946 70,000 1.2499
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