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BTS5215LAUMA1
Category: Current Limit Switches, Electromechanical, Power Load Distribution SwitchesInfineon |
Infineon | High side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions.
Packaging: TR
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IR2110STRPBF
Category: Gate and Power Drivers, Mosfet Igbt DriversInfineon |
Infineon | IR2110S Series Dual 20V Surface Mount High and Low Side Driver - SOIC-16
Packaging: REEL
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| 1,000 | Log in to view |
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IRFR3410TRPBF
Category: MOSFETsInfineon |
Infineon | Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - TO-252-3
Packaging: REEL
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IRF3205PBF
Category: MOSFETs, Single MOSFETsInfineon |
Infineon | Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Packaging: BLK
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IRFS7530TRL7PP
Category: MOSFETsInfineon |
Infineon | Single N-Channel 60 V 1.4 mOhm 236 nC HEXFET® Power Mosfet - D2PAK-7
Packaging: REEL
Supplier Type: Partner Stock | Log in to view | | | Qty | Price |
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| 800 | Log in to view | | 1,600 | Log in to view | | 2,400 | Log in to view | | 3,200 | Log in to view |
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IRF640NPBF
Category: MOSFETs, Single MOSFETsInfineon |
Infineon | Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Packaging: RAL
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IRF540NSTRLPBF
Category: MOSFETs, Single MOSFETsInfineon |
Infineon | Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530L) is available for lowprofile applications.
Packaging: TR
Supplier Type: Partner Stock | Log in to view | | | Qty | Price |
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| 800 | Log in to view | | 1,600 | Log in to view | | 3,200 | Log in to view | | 4,800 | Log in to view | | 6,400 | Log in to view | | 8,000 | Log in to view | | 80,000 | Log in to view |
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IRFR5410TRPBF
Category: MOSFETs, Single MOSFETsInfineon |
Infineon | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Packaging: TR
Supplier Type: Partner Stock | Log in to view | | | Qty | Price |
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| 2,000 | Log in to view | | 4,000 | Log in to view | | 8,000 | Log in to view | | 12,000 | Log in to view | | 16,000 | Log in to view | | 20,000 | Log in to view | | 200,000 | Log in to view |
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IPP083N10N5AKSA1
Category: MOSFETs, Single MOSFETsInfineon |
Infineon | OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on).
Packaging: RAL
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BTS4140NXT/SAMPLE
Category: Power Load Distribution SwitchesInfineon |
Infineon | High side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions.
Packaging: TR
Supplier Type: Partner Stock | Log in to view | | | Qty | Price |
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| 4,000 | Log in to view |
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IRF4905PBF
Category: MOSFETs, Single MOSFETsInfineon |
Infineon | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Packaging: RAL
Supplier Type: Partner Stock | Log in to view | | | Qty | Price |
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| 1 | Log in to view | | 10 | Log in to view | | 30 | Log in to view | | 50 | Log in to view | | 100 | Log in to view | | 250 | Log in to view | | 500 | Log in to view |
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IR3584MTRPBF
Category: DC / DC Controllers, DC to DC ControllersInfineon |
Infineon | The IR3584 is a dual-loop digital multi-phase buck controller designed for CPU voltage regulation, and is fully compliant with Intel VR12 and compliant with VR12.5 Rev 1.3 PWM specifications. The IR3584 includes IR’s Efficiency Shaping Technology to deliver exceptional efficiency at minimum cost across the entire load range. IR’s Dynamic Phase Control adds/drops phases based upon load current. The IR3584 can be configured to enter 1 or 2-phase operation and active diode emulation mode automatically or by command. IR’s unique Adaptive Transient Algorithm (ATA), based on proprietary non-linear digital PWM algorithms, minimizes output bulk capacitors. IR3584 has 127 possible address values for both the PMBus and I2C bus interfaces. The device configuration can be easily defined using the IR Digital Power Design Center (DPDC) GUI, and is stored in the on-chip Non-Volatile Memory (NVM). This reduces external components and minimizes the package size. The IR3584 provides extensive OVP, UVP, OCP, OTP & CAT FLT fault protection, and includes thermistor based temperature sensing or per phase temperature reporting when using the IR powIRstage. The controller is designed to work with either RDS(on) current sense PowIRstages or with DCR current sense. The IR3584 also includes numerous VR design simplifying and differentiating features, like register diagnostics, which enable fast time-to-market.
Packaging: TR
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| 3,000 | Log in to view | | 6,000 | Log in to view | | 12,000 | Log in to view | | 18,000 | Log in to view | | 24,000 | Log in to view | | 30,000 | Log in to view | | 300,000 | Log in to view |
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BAS16E6327HTSA1
Category: Rectifiers, Small Signal Switching DiodesInfineon |
Infineon | High Speed Switching Diode.
Packaging: TR
Supplier Type: Partner Stock | Log in to view | | | Qty | Price |
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| 45,000 | Log in to view | | 51,000 | Log in to view | | 96,000 | Log in to view | | 225,000 | Log in to view | | 450,000 | Log in to view | | 2,250,000 | Log in to view | | 4,500,000 | Log in to view |
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XMC1302T038X0064ABXUMA1
Category: ARM Microcontrollers, MCUsInfineon |
Infineon | 32-bit Microcontrollers with ARM® Cortex®-M0 with focus on low-cost embedded control applications.
Packaging: TAP
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IRF7342TRPBF-EL
Category: MOSFET ArraysInfineon |
Infineon | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Packaging: BKN
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CY7C68013A-56LTXC
Category: Usb, USB Interface ICsInfineon |
Infineon | CY7C68 Series 16 kb RAM EZ-USB FX2LP™ USB Microcontroller - QFN-56
Packaging: TRAY
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IRLR024NTRPBF
Category: MOSFETs, Single MOSFETsInfineon |
Infineon | Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Packaging: TR
Supplier Type: Partner Stock | Log in to view | | | Qty | Price |
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| 2,000 | Log in to view | | 4,000 | Log in to view | | 8,000 | Log in to view | | 12,000 | Log in to view | | 16,000 | Log in to view | | 20,000 | Log in to view | | 200,000 | Log in to view |
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FM24C04B-GTR
Category: Ferroelectric RAM (FRAM), FRAM, Fram MramInfineon |
Infineon | The FM24C04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24C04B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24C04B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.
Packaging: TR
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BSC123N08NS3GXT
Category: Other DiscretesInfineon |
Infineon | OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Packaging: TR
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SPD08P06PGBTMA1
Category: MOSFETs, Single MOSFETsInfineon |
Infineon | Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Packaging: BLK
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