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IPW60R041P6FKSA1
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | Infineons CoolMOS™ P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Packaging: BLK
Supplier Type: Authorized Distributor | 20
available | | | Qty | Price |
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| 1 | 24.35608 | | 10 | 21.73472 | | 25 | 21.21392 | | 50 | 20.24176 | | 100 | 19.11336 |
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IPP083N10N5AKSA1
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on).
Packaging: RAL
Supplier Type: Authorized Distributor | 19,000
available | | |
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BCR135SH6327XTSA1
Category: Digital Transistor, Discrete Semiconductors › SemiconductorsInfineon |
Infineon | NPN Silicon Digital Transistor
Packaging: TR
Supplier Type: Authorized Distributor | 3,000
available | | | Qty | Price |
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| 3,000 | 0.13244 | | 6,000 | 0.12838 | | 12,000 | 0.12418 | | 18,000 | 0.12012 | | 24,000 | 0.11592 | | 30,000 | 0.11186 | | 300,000 | 0.10766 |
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IKQ75N120CH3XKSA1
Category: Discrete Semiconductors › IGBT, SemiconductorsInfineon |
Infineon | Trans IGBT Chip N-CH 1200V 150A 938W 3-Pin(3+Tab) TO-247 Tube
Packaging: N/A
Supplier Type: Authorized Distributor | 137
available | | | Qty | Price |
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| 1 | 27.44098 | | 10 | 24.23624 | | 25 | 22.28324 | | 50 | 21.68964 | | 100 | 20.98992 | | 240 | 20.33374 | | 480 | 19.03524 |
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IKW50N65EH5XKSA1
Category: Discrete Semiconductors › IGBT, SemiconductorsInfineon |
Infineon | Trans IGBT Chip N-CH 650V 80A 275W 3-Pin(3+Tab) TO-247 Tube
Packaging: N/A
Supplier Type: Authorized Distributor | 162
available | | | Qty | Price |
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| 1 | 10.30484 | | 10 | 8.60888 | | 25 | 8.03768 | | 100 | 6.39884 | | 240 | 5.47008 |
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IM564X6DXKMA1
Category: Discrete Semiconductors › Intelligent Power Module, SemiconductorsInfineon |
Infineon | PFC-Integrated Three-Phase Intelligent Power Module
Packaging: N/A
Supplier Type: Authorized Distributor | 261
available | | |
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IPB80N06S405ATMA2
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | Trans MOSFET N-CH 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Packaging: N/A
Supplier Type: Authorized Distributor | 1,000
available | | | Qty | Price |
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| 1,000 | 1.63478 | | 2,000 | 1.54994 | | 5,000 | 1.48498 | | 10,000 | 1.42884 |
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IRF630NPBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Packaging: RAL
Supplier Type: Authorized Distributor | 1,310
available | | | Qty | Price |
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| 1 | 0.83188 | | 10 | 0.80752 | | 30 | 0.78302 | | 50 | 0.75852 | | 100 | 0.73402 | | 250 | 0.70966 | | 500 | 0.68516 |
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IRFS4410TRLPBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | Single N-Channel 100 V 10 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
Packaging: REEL
Supplier Type: Authorized Distributor | 800
available | | | Qty | Price |
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| 800 | 2.72552 | | 1,600 | 2.72552 | | 2,400 | 2.72552 |
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IRFB3077PBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | International Rectifier has been at the forefront of power MOSFET design and innovation. The company's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.
Packaging: BLK
Supplier Type: Authorized Distributor | 291
available | | | Qty | Price |
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| 1 | 4.63512 | | 10 | 4.20112 | | 25 | 4.04488 | | 50 | 3.88864 | | 100 | 3.7324 |
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IRFP4227PBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°Coperating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Packaging: RAL
Supplier Type: Authorized Distributor | 1,782
available | | | Qty | Price |
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| 25 | 4.05734 | | 30 | 3.93792 | | 60 | 3.81864 | | 130 | 3.69936 | | 250 | 3.57994 | | 1,300 | 3.46066 | | 2,500 | 3.34138 |
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IRLR024NTRPBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Packaging: TR
Supplier Type: Authorized Distributor | 6,000
available | | | Qty | Price |
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| 2,000 | 0.57176 | | 4,000 | 0.5544 | | 8,000 | 0.53704 | | 12,000 | 0.51982 | | 16,000 | 0.50246 | | 20,000 | 0.4851 | | 200,000 | 0.46774 |
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IKD06N60RFATMA1
Category: Discrete Semiconductors › IGBT, SemiconductorsInfineon |
Infineon | Trans IGBT Chip N-CH 600V 12A 100W 3-Pin(2+Tab) DPAK T/R
Packaging: N/A
Supplier Type: Authorized Distributor | 2,400
available | | | Qty | Price |
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| 1 | 0.9338 | | 10 | 0.8918 | | 25 | 0.88872 | | 100 | 0.833 | | 250 | 0.8246 | | 500 | 0.8239 | | 1,000 | 0.8232 |
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IRF3205PBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | Los MOSFET de potencia HEXFET avanzados de International Rectifier utilizan técnicas de procesamiento avanzadas para lograr una resistencia de encendido extremadamente baja por área de silicio. Esta ventaja, combinada con la rápida velocidad de conmutación y el diseño robusto que caracterizan a los MOSFET de potencia HEXFET, proporciona al diseñador un dispositivo sumamente eficiente y fiable para una amplia variedad de aplicaciones. El encapsulado TO-220 es el preferido universalmente para todas las aplicaciones comerciales e industriales con niveles de disipación de potencia de hasta aproximadamente 50 vatios. La baja resistencia térmica y el bajo coste del encapsulado TO-220 contribuyen a su amplia aceptación en la industria.
Packaging: BLK
Supplier Type: Authorized Distributor | 67,071
available | | | Qty | Price |
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| 1 | 2.74288 | | 10 | 2.32624 | | 100 | 1.80544 | | 500 | 1.526 | | 1,000 | 1.24292 |
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IRFP260MPBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Packaging: RAL
Supplier Type: Authorized Distributor | 139
available | | | Qty | Price |
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| 800 | 2.47898 | | 850 | 2.40604 | | 1,650 | 2.33324 | | 4,000 | 2.2603 | | 8,000 | 2.18736 | | 40,000 | 2.11442 | | 80,000 | 2.04148 |
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IRLR8726TRPBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | International Rectifier has been at the forefront of power MOSFET design and innovation. The company's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.
Packaging: TAP
Supplier Type: Authorized Distributor | 656
available | | | Qty | Price |
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| 1 | 1.14926 | | 10 | 1.0052 | | 25 | 0.92526 | | 50 | 0.84714 | | 100 | 0.76734 |
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IRF7342TRPBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R
Packaging: N/A
Supplier Type: Authorized Distributor | 4,000
available | | | Qty | Price |
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| 4,000 | 0.83328 | | 8,000 | 0.7952 | | 24,000 | 0.79352 |
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IRF7342TRPBF-EL
Category: Discrete Semiconductors › MOSFET Array, SemiconductorsInfineon |
Infineon | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Packaging: BKN
Supplier Type: Authorized Distributor | 7,500
available | | |
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IRFS7440TRLPBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | Trans MOSFET N-CH 40V 208A 3-Pin(2+Tab) D2PAK T/R
Packaging: N/A
Supplier Type: Authorized Distributor | 380
available | | | Qty | Price |
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| 1 | 1.87292 | | 10 | 1.73376 | | 25 | 1.72522 | | 100 | 1.55218 | | 250 | 1.20792 |
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IRFB3407ZPBF
Category: Discrete Semiconductors › MOSFET, SemiconductorsInfineon |
Infineon | N/A
Packaging: BLK
Supplier Type: Authorized Distributor | 35
available | | | Qty | Price |
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| 1 | 3.6456 | | 10 | 3.14216 | | 100 | 2.56928 | | 500 | 2.18736 | | 1,000 | 1.94432 |
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