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IRF3205PBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

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IRF640NPBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

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SI2301CDS-T1-GE3

Category: MOSFETs, Single MOSFETsVishay

Vishay

N/A

Packaging: TR
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IRF540NSTRLPBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530L) is available for lowprofile applications.

Packaging: TR
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FCH077N65F_F085

Category: Single MOSFETsonsemi

onsemi

The SuperFETIl MOSFET is brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy Consequently Supercell is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HE-V-EV automotive. SuperFET Il FRFET MOSFETs optimized body diode reverse recovery performance can remove additional component and improve system reliability.

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IRFR5410TRPBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

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IPP083N10N5AKSA1

Category: MOSFETs, Single MOSFETsInfineon

Infineon

OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on).

Packaging: RAL
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<img decoding="async" data-src="https://ascglobal.com/wp-content/uploads/ASC-no-image-img.jpg" src="data:image/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==" class="lazyload" style="--smush-placeholder-width: 400px; --smush-placeholder-aspect-ratio: 400/400;"><noscript><img decoding="async" data-src="https://ascglobal.com/wp-content/uploads/ASC-no-image-img.jpg" src="data:image/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==" class="lazyload" style="--smush-placeholder-width: 400px; --smush-placeholder-aspect-ratio: 400/400;"><noscript><img decoding="async" data-src="https://ascglobal.com/wp-content/uploads/ASC-no-image-img.jpg" src="data:image/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==" class="lazyload" style="--smush-placeholder-width: 400px; --smush-placeholder-aspect-ratio: 400/400;"><noscript><img decoding="async" data-src="https://ascglobal.com/wp-content/uploads/ASC-no-image-img.jpg" src="data:image/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==" class="lazyload" style="--smush-placeholder-width: 400px; --smush-placeholder-aspect-ratio: 400/400;"><noscript><img decoding="async" src="https://ascglobal.com/wp-content/uploads/ASC-no-image-img.jpg">

IRF4905PBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

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IRLR024NTRPBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

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SPD08P06PGBTMA1

Category: MOSFETs, Single MOSFETsInfineon

Infineon

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

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FDB075N15A

Category: MOSFETs, Single MOSFETsonsemi

onsemi

N/A

Packaging: TR
Supplier Type: Partner Stock

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<img decoding="async" data-src="https://ascglobal.com/wp-content/uploads/ASC-no-image-img.jpg" src="data:image/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==" class="lazyload" style="--smush-placeholder-width: 400px; --smush-placeholder-aspect-ratio: 400/400;"><noscript><img decoding="async" data-src="https://ascglobal.com/wp-content/uploads/ASC-no-image-img.jpg" src="data:image/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==" class="lazyload" style="--smush-placeholder-width: 400px; --smush-placeholder-aspect-ratio: 400/400;"><noscript><img decoding="async" data-src="https://ascglobal.com/wp-content/uploads/ASC-no-image-img.jpg" src="data:image/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==" class="lazyload" style="--smush-placeholder-width: 400px; --smush-placeholder-aspect-ratio: 400/400;"><noscript><img decoding="async" data-src="https://ascglobal.com/wp-content/uploads/ASC-no-image-img.jpg" src="data:image/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==" class="lazyload" style="--smush-placeholder-width: 400px; --smush-placeholder-aspect-ratio: 400/400;"><noscript><img decoding="async" src="https://ascglobal.com/wp-content/uploads/ASC-no-image-img.jpg">

FCMT125N65S3

Category: MOSFETs, Single MOSFETsonsemi

onsemi

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IRFP4227PBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°Coperating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Packaging: RAL
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IRF630NPBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

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IAUT300N10S5N015ATMA1

Category: MOSFETs, Single MOSFETsInfineon

Infineon

N/A

Packaging: TAP
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IRF9630PBF-BE3

Category: MOSFETs, Single MOSFETsVishay

Vishay

N/A

Packaging: BLK
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IRLR8726TRPBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

International Rectifier has been at the forefront of power MOSFET design and innovation. The company's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Packaging: TAP
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IRF7416TRPBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Packaging: TAP
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IPB044N15N5ATMA1

Category: MOSFETs, Single MOSFETsInfineon

Infineon

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.

Packaging: TR
Supplier Type: Partner Stock

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<img decoding="async" data-src="https://www.avnet.com/opasdata/d120001/derivates/4/072/445/Infineon_800V_CoolMOS_CE-icon_thumb.jpg" src="data:image/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==" class="lazyload"><noscript><img decoding="async" src="https://www.avnet.com/opasdata/d120001/derivates/4/072/445/Infineon_800V_CoolMOS_CE-icon_thumb.jpg">

IRFR7440TRPBF

Category: MOSFETs, Single MOSFETsInfineon

Infineon

International Rectifier has been at the forefront of power MOSFET design and innovation. The company's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Packaging: BLK
Supplier Type: Partner Stock

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