S29GL512P10TFIR10
Category: Flash Memory , Memory & Storage › Memory ICs Infineon
Infineon NOR Flash Parallel 3.3V 512M-bit 64M x 8/32M x 16 100ns 56-Pin TSOP Tray Packaging: N/ASupplier Type: Authorized Distributor2 Qty Price 1 8.65046 10 8.12532 25 7.6902 50 7.35476 100 7.15904 500 6.91558
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MT25QL128ABA8ESF-0SIT
Category: Flash Memory , Memory & Storage › Memory ICs Micron
Micron MT25QL128ABA8ESF-0SIT is a 3V, multiple I/O, sector erase, serial NOR flash memory. It is a high-performance multiple input/output serial flash memory device. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Innovative, high-performance, dual, and quad input/output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Packaging: TRYSupplier Type: Authorized Distributor3,454 Qty Price 1 4.83308 10 4.69966 30 4.56638 50 4.46642 100 4.333 250 4.19972 500 4.06644
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FM24C04B-GTR
Category: FRAM , Memory & Storage › Memory ICs Infineon
Infineon The FM24C04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24C04B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24C04B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. Packaging: TRSupplier Type: Authorized Distributor5,000 Qty Price 695 2.12492 700 2.06234 1,400 1.9999 3,500 1.93732 7,000 1.87488 35,000 1.81244 70,000 1.74986
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