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MT25QL128ABA8ESF-0SIT
Category: Flash Memory, Memory & Storage › Memory ICsMicron |
Micron | MT25QL128ABA8ESF-0SIT is a 3V, multiple I/O, sector erase, serial NOR flash memory. It is a high-performance multiple input/output serial flash memory device. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Innovative, high-performance, dual, and quad input/output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.
Packaging: TRY
Supplier Type: Authorized Distributor | 3,454
available | | | Qty | Price |
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| 1 | 3.4522 | | 10 | 3.3569 | | 30 | 3.2617 | | 50 | 3.1903 | | 100 | 3.095 | | 250 | 2.9998 | | 500 | 2.9046 |
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FM24C04B-GTR
Category: FRAM, Memory & Storage › Memory ICsInfineon |
Infineon | The FM24C04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24C04B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24C04B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.
Packaging: TR
Supplier Type: Authorized Distributor | 5,000
available | | | Qty | Price |
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| 695 | 1.5178 | | 700 | 1.4731 | | 1,400 | 1.4285 | | 3,500 | 1.3838 | | 7,000 | 1.3392 | | 35,000 | 1.2946 | | 70,000 | 1.2499 |
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M24C32-WMN6P
Category: EEPROM, Memory & Storage › Memory ICsSTMicroelectronics |
STMicroelectronics | The M24C32 is a 32-Kbit I²C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 4 K × 8 bits.This I²C EEPROM can operate with a supply voltage from 2.5 V up to 5.5 V over an ambient temperature range of -40 °C / 125 °C.The device is compliant with the Automotive standard AEC-Q100 grade 1.
Packaging: BLK
Supplier Type: Authorized Distributor | 6,739
available | | | Qty | Price |
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| 1 | 0.372 | | 10 | 0.3633 | | 100 | 0.2964 | | 500 | 0.2889 | | 1,000 | 0.2802 |
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